metal oxide semiconductor
英 [ˈmetl ˈɒksaɪd ˌsemikənˈdʌktə(r)]
美 [ˈmetl ˈɑːksaɪd ˈsemikəndʌktər]
网络 金属氧化物半导体; 金属-氧化物-半导体; 半导体; 氧化物半导体; 金属氧化物半导体式
双语例句
- To boot an operating system, the BIOS runtime searches for devices that are both active and bootable in the order of preference defined by the complementary metal oxide semiconductor ( CMOS) settings.
要引导一个操作系统，BIOS运行时会按照CMOS的设置定义的顺序来搜索处于活动状态并且可以引导的设备。 - P-channel metal oxide semiconductor
P沟道金属氧化物半导体 - Metal oxide semiconductor transistor conductor insulator semiconductor fet
金属绝缘体半导体场效应晶体管 - Water is a compound of hydrogen and oxygen. combined metal oxide semiconductor
水是氢和氧的化合物。复合金属氧化物半导体 - Research of Vehicle Noxious Gas Detection Basing on Metal Oxide Semiconductor Sensor
基于金属氧化物气体传感器的车内有害气体检测研究 - This invention discloses a trenched metal oxide semiconductor field effect transistor ( MOSFET) cell.
场效应晶体管以及制造场效应晶体管的方法。 - Complementary metal oxide semiconductor device
互补金属氧化物半导体器件 - The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or CMOS.
声音晶片的全部制程，是完全相容于互补式金属氧化物半导体（cmos）的工业标准制程。 - The cross-section conductance formula, which contains the sensing function of grain-boundaries and grain-necks in porous metal oxide semiconductor gas sensing crystals, is proposed.
给出了多孔的金属氧化物半导体气敏晶体的既含晶粒间界传感作用又含晶粒缩颈传感作用的截面电导公式。 - Combined metal oxide semiconductor intermetallic compound superconductor
复合金属氧化物半导体金属间化合物超导体 - A process comprises that: firstly, the quasi-one-dimensional metal oxide semiconductor nano-material is synthesized;
其工艺是：先合成准一维金属氧化物半导体纳米材料； - The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.
用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。 - The structure of nanoscale metal oxide semiconductor field effect transistor ( NANO MOSFET) is introduced.
本文首先给出了SOI上纳米金属氧化物半导体场效应晶体管（NANOMOSFET）的结构，它是一种非传统MOSFET。 - 1/ f optimization of a complementary metal oxide semiconductor focal plane array input circuit
互补金属氧化物半导体焦平面阵列输入电路1/f噪声的优选 - A complementary metal oxide semiconductor ( CMOS) readout integrated circuit ( ROIC) for the sensitive material of vanadium dioxide ( VO_2) was introduced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路（ROIC）。 - In the present study, we use a clustering algorithm based on the latent variable modeling, which is proposed by the author, to recognize the patterns in two metal oxide semiconductor ( MOS) gas sensor array data set.
该文提出了基于隐变量模型的聚类算法对两组金属氧化物半导体（MOS）传感器阵列数据进行模式识别。 - Commonly undoped metal oxide semiconductor gas sensors have good sensitivity, but selectivity unsatisfied.
未经掺杂的金属氧化物半导体气敏传感器通常灵敏度很高，但选择性较差。 - A development of infrared focal plane array ( IRFPA) complementary metal oxide semiconductor ( CMOS) readout integrated circuit ( ROIC) is introduced. The circuit principle of ROIC, time sequence of multiplexer, circuit parameter, layout design and technology analysis are described.
介绍了一种红外焦平面阵列（IRFPA）互补金属氧化物半导体（CMOS）读出集成电路（ROIC）的研制方案，叙述了读出电路的电路原理及工作时序、电路参数设计、版图设计及工艺分析。 - An onboard electronic nose system is designed using metal oxide semiconductor gas sensors.
采用金属氧化物半导体气体传感器，设计了机载电子鼻系统； - The dimensionless Poisson equation described by dimension and undissipation coefficient for metal oxide semiconductor gas sensing crystals with an arbitrary shape is presented and solved by using the perturbation method.
提出了用维数和未耗散系数表示的任意形状的金属氧化物半导体气敏晶体的无量纲化Poisson方程，并利用微扰法对Poisson方程进行了求解。 - Since the switched current technology is employed, this system is fully compatible with a standard digital Complementary metal oxide semiconductor ( CMOS) technology, and is easily to be integrated in mixed analog digital system and implemented in very large scale integrated circuit ( VLSI).
由于采用开关电流技术，该系统电路可以直接采用标准的数字互补型金属氧化物半导体（CMOS）工艺来实现，便于模、数混合集成，易于超大规模集成电路（VLSI）的制作。 - TiO_2 has been known as an n-type metal oxide semiconductor and an important inorganic function material. It can be used in fabricating medium material, photocatalytic films, reducing reflect coat, gas sensor, etc.
TiO2是n型金属氧化物半导体，是一种重要的无机功能材料，可用于制作电介质材料、光催化薄膜、减反射涂层、气敏传感器等。 - SnO_2 is an important n-type metal oxide semiconductor with broad energy levels and widespread apply in gas detection electrode photocatalysts etc.
SnO2是一种重要的宽能级n型半导体金属氧化物，在气体检测、电池电极、光催化剂等方面具有广泛的应用。 - The metal oxide semiconductor films have been used as sensing medium in the opto chemical sensor based on surface plasmon resonance.
采用溶胶凝胶金属氧化物半导体薄膜，作为表面等离子体激元共振效应的光化学传感器的传感介质。 - A Research on NO_x Gas Sensitivity of Metal Oxide Semiconductor SnO_x Thin Film
金属氧化物半导体SnOx薄膜对NOx气体敏感性能研究 - Gas-sensing mechanism metal oxide semiconductor sensors was expatiated, and factors to affect gas-sensing property were analyzed and researched. In addition, ways, reported in the world, to improve gas-sensing property were reviewed.
随后阐述了半导体金属氧化物的气敏机理，分析和研究了影响气敏性能的因素，并论述了当前国内外所报道的改善气敏传感器的气敏性能的方法。 - With the increasing of device density in the integrated circuit, the issues of the power dissipation in the conventional planar metal oxide semiconductor field effect transistor ( MOSFET) become more prominent.
随着集成电路中器件密度的增加，传统平面MOS晶体管（MOSFET）的功耗问题变得更加突出。 - As a metal oxide semiconductor sensing material, zinc oxide has been under extensive research due to its high physical and chemical stability.
ZnO是一种金属氧化物半导体材料，由于物理化学性能稳定等优点而被广泛研究。 - Study of the metal oxide semiconductor thin film optical waveguide are focused on optical communications and the development of integrated optical device at home and abroad, However, the application of NiO film in OWG sensors is rare, especially for VOC gas detection.
国内外对半导体金属氧化物薄膜光波导的研究主要集中于光通讯和集成光学器件的研制，而对光学传感性能的研究很少，尤其是金属氧化物薄膜光波导气敏元件。 - Since gas sensors based on metal oxide semiconductor had been studied in 1962, researchers have basically resolved the problems of low sensitivity and poor selectivity of gas sensors. Recently, gas sensors have been widely used to detect or control inflammable and toxic gases.
经过四十多年的研究发展，传感器工作者已基本解决了金属氧化物半导体气体传感器的灵敏度和选择性问题，使之在可燃气体、有毒有害气体的检测和控制方面取得了广泛地应用。